A 0.42-nanometer breakthrough could push transistors beyond silicon

Researchers have developed a method to improve the performance of atomically thin semiconductors by precisely controlling the interface between the material and its insulating layer. This breakthrough allows for thinner gate dielectrics without sacrificing electrical efficiency.
For more than a decade, atomically thin semiconductors have stood out as a promising route beyond conventional silicon. These materials can be just a single atom thick while still offering impressive electrical properties. In principle, they could enable transistors that are smaller, faster, and more energy efficient than today's devices. Yet even as researchers have discovered increasingly capable two-dimensional semiconductor materials, one stubborn engineering problem has remained.
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